AOUS66923 general description product summary v ds i d (at v gs =10v) 58a r ds(on) (at v gs =10v) < 11m r ds(on) (at v gs =4.5v) < 15m applications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as t j , t stg symbol t 10s steady-state steady-state r q jc 100v n-channel alphasgt tm orderable part number package type form minimum order quantity 100v ? trench power alphasgt tm technology ? low r ds(on) ? logic level driving ? excellent q g x r ds(on) product (fom) ? spike optimized process ? rohs and halogen-free compliant t a =25c t a =70c t c =25c t c =100c t c =25c avalanche current c continuous drain current thermal characteristics parameter max t a =70c 4.0 c units junction and storage temperature range -55 to 150 typ p dsm w t a =25c 6.2 power dissipation a maximum junction-to-ambient a c/w r q ja 15 40 20 w i d a 30 a 130 i dsm 13.5 mj 45 16.5 58 AOUS66923 ultra so8 tape & reel 3000 v a absolute maximum ratings t a =25c unless otherwise noted 20 v maximum units maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.35 50 1.7 ? high frequency switching and synchronous rectification power dissipation b 29 t c =100c p d 100 73 gate-source voltage pulsed drain current c 36.5 parameter drain-source voltage continuous drain current g d s ultraso-8 tm top view bottom view g d s g s rev.1.0: april 2018 www.aosmd.com page 1 of 6 downloaded from: http:///
AOUS66923 symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.6 2.1 2.6 v 9.2 11 t j =125c 16 19.5 11.7 15 m g fs 50 s v sd 0.72 1 v i s 58 a c iss 1725 pf c oss 360 pf c rss 7.5 pf r g 0.3 0.8 1.3 q g (10v) 25 35 nc q g (4.5v) 12.5 18 nc q gs 6 nc q gd 3.5 nc q oss output charge v gs =0v, v ds =50v 30 nc t d(on) 8.5 ns t r 3 ns t d(off) 23 ns t f 3.5 ns t rr 41 ns q rr 156 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. m v gs =10v, v ds =50v, i d =20a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =250 m a, v gs =0v r ds(on) static drain-source on-resistance gate source charge gate drain charge total gate charge switching parameters turn-on delaytime v ds =0v, v gs =20v maximum body-diode continuous current input capacitance gate-body leakage current body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-off delaytime turn-off fall time v gs =10v, v ds =50v, r l =2.5 w , r gen =3 w diode forward voltage dynamic parameters v gs =4.5v, i d =20a i f =20a, di/dt=500a/ m s turn-on rise time reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz v ds =v gs, i d =250 m a output capacitance forward transconductance i s =1a, v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a a. the value of r q ja is measured with the device mounted on 1in 2 fr -4 board with 2oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction- to -case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. single pulse width limited by junction temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction- to -case thermal impedance which is measured with the device mounted to a large he atsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr -4 board with 2oz. copper, in a still air environment with t a =25 c. rev.1.0: april 2018 www.aosmd.com page 2 of 6 downloaded from: http:///
AOUS66923 typical electrical and thermal characteristics 0 20 40 60 80 100 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 5 10 15 20 0 5 10 15 20 25 30 r ds(on) (m w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e- 05 1.0e- 04 1.0e- 03 1.0e- 02 1.0e- 01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 normalized on-resistance temperature ( c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 5 10 15 20 25 30 35 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =3v 3.5v 4.5v 10v 4v 6v rev.1.0: april 2018 www.aosmd.com page 3 of 6 downloaded from: http:///
AOUS66923 typical electrical and thermal characteristics 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction- to - case (note f) 0 2 4 6 8 10 0 10 20 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 0 25 50 75 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0.01 0.1 1 10 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) c oss c rss v ds =50v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms r q jc =1.7 c/w rev.1.0: april 2018 www.aosmd.com page 4 of 6 downloaded from: http:///
AOUS66923 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 20 40 60 80 100 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 20 40 60 80 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e - 05 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction- to -ambient (note h) t a =25 c r q ja =50 c/w 0 0.5 1 1.5 2 0 20 40 60 80 100 eoss(uj) v ds (volts) figure 14: coss stored energy rev.1.0: april 2018 www.aosmd.com page 5 of 6 downloaded from: http:///
AOUS66923 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr figure a: gate charge test circuit & waveforms figure b: resistive switching test circuit & waveforms figure c: unclamped inductive switching (uis) test circuit & waveforms figure d: diode recovery test circuit & waveforms rev.1.0: april 2018 www.aosmd.com page 6 of 6 downloaded from: http:///
|
